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@ARTICLE{Roschek:23919,
      author       = {Roschek, T. and Repmann, T. and Müller, J. and Rech, B.
                      and Wagner, H.},
      title        = {{C}omprehensive study of microcrystalline silicon solar
                      cells deposited at high rate using 13.56 {MH}z
                      plasma-enhanced chemical vapor deposition},
      journal      = {Journal of vacuum science $\&$ technology / A},
      volume       = {20},
      issn         = {0734-2101},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {PreJuSER-23919},
      pages        = {492 - 498},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this article we present a comprehensive study of
                      microcrystalline silicon (PC-Si:H) p-i-n solar cells
                      prepared by using plasma-enhanced chemical vapor deposition
                      (PECVD) at 13.56 MHz excitation frequency. In the first step
                      the cell development was performed in a small area PECVD
                      reactor showing the relationship between the deposition
                      process parameters and the resulting solar cell performance.
                      Subsequent up-scaling to a substrate area of 30 X 30 cm
                      confirmed the scalability of optimized deposition parameters
                      to large area reactors. We investigated the deposition
                      regime of high rf power P (rf) (0.25-0.7 W/cm(2)) and high
                      deposition pressure P (dep) (1 - 11 Torr) for the muc-Si:H i
                      layer. Furthermore, the influence of silane concentration
                      and deposition temperature was studied. A transition between
                      amorphous and microcrystalline growth could be achieved by a
                      variation of either deposition pressure, plasma power, or
                      silane concentration. The best microcrystalline silicon
                      solar cells were prepared close to the transition to
                      amorphous growth. A high deposition pressure was a
                      prerequisite for obtaining, high quality material at a high
                      growth rate. The best solar cell efficiencies achieved so
                      far are $8.1\%$ and $6.6\%$ at i-layer growth rates of 5 and
                      10 Angstrom/s, respectively, for muc-Si:H single junction
                      cells. Applied in a-Si:H/muc-Si:H tandem cells a stabilized
                      efficiency of $10.0\%$ was achieved. (C) 2002 American
                      Vacuum Society.},
      keywords     = {J (WoSType)},
      cin          = {IPV},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB46},
      pnm          = {Photovoltaik},
      pid          = {G:(DE-Juel1)FUEK247},
      shelfmark    = {Materials Science, Coatings $\&$ Films / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000174711100031},
      doi          = {10.1116/1.1450585},
      url          = {https://juser.fz-juelich.de/record/23919},
}