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000024637 0247_ $$2DOI$$a10.1103/PhysRevLett.89.236101
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000024637 084__ $$2WoS$$aPhysics, Multidisciplinary
000024637 1001_ $$0P:(DE-Juel1)VDB3936$$aAntons, A.$$b0$$uFZJ
000024637 245__ $$aElement specific surface reconstructions of islands during surfactant-mediated growth on Si(111)
000024637 260__ $$aCollege Park, Md.$$bAPS$$c2002
000024637 300__ $$a236101
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000024637 440_0 $$04925$$aPhysical Review Letters$$v89$$x0031-9007$$y23
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000024637 520__ $$aThe early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si-n clusters (nless than or equal to12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1x1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1x1) structure appears, while in the center the (root3xroot3) terrace structure is observed.
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000024637 7001_ $$0P:(DE-Juel1)VDB3933$$aSchroeder, K.$$b1$$uFZJ
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000024637 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b3$$uFZJ
000024637 7001_ $$0P:(DE-Juel1)VDB3938$$aBerger, R.$$b4$$uFZJ
000024637 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b5$$uFZJ
000024637 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.89.236101$$gVol. 89, p. 236101$$p236101$$q89<236101$$tPhysical review letters$$v89$$x0031-9007$$y2002
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