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001     24637
005     20200423203335.0
017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.89.236101
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041 _ _ |a eng
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|a Physics, Multidisciplinary
100 1 _ |a Antons, A.
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245 _ _ |a Element specific surface reconstructions of islands during surfactant-mediated growth on Si(111)
260 _ _ |a College Park, Md.
|b APS
|c 2002
300 _ _ |a 236101
336 7 _ |a Journal Article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|y 23
|v 89
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si-n clusters (nless than or equal to12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1x1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1x1) structure appears, while in the center the (root3xroot3) terrace structure is observed.
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700 1 _ |a Schroeder, K.
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700 1 _ |a Voigtländer, B.
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700 1 _ |a Cherepanov, V.
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700 1 _ |a Berger, R.
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700 1 _ |a Blügel, S.
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773 _ _ |a 10.1103/PhysRevLett.89.236101
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