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@ARTICLE{Filimonov:24641,
author = {Filimonov, S. N. and Voigtländer, B.},
title = {{I}nfluence of strain on binding energies of {S}i atoms at
{G}e(111) surfaces},
journal = {Surface science},
volume = {512},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {PreJuSER-24641},
pages = {L335 - L340},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {Rearrangement of two-dimensional Ge and Si islands after
coarsening on a laterally strain modulated Ge surface
covered with a monolayer of Bi is studied by scanning
tunneling microscopy. Spatial ordering of the islands with
respect to the modulations of the strain field shows that
the binding energy of Si atoms at strained Si islands is,
unexpectedly, higher than at unstrained islands. This
behavior is explained by a strong compressive stress of the
surfactant layer, which favors an expansion of the
underlying surface structures and therefore stabilizes the
tensile strained Si islands. It is shown that a Si mass
transport towards more strained Si islands can be also
favored by an increased binding energy of Si adatoms to the
less strained parts of the Ge surface. (C) 2002 Elsevier
Science B.V. All rights reserved.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {540},
cid = {I:(DE-Juel1)VDB43},
pnm = {Methoden und Systeme der Informationstechnik},
pid = {G:(DE-Juel1)FUEK253},
shelfmark = {Chemistry, Physical / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000176646200003},
doi = {10.1016/S0039-6028(02)01684-9},
url = {https://juser.fz-juelich.de/record/24641},
}