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| Hauptseite > Publikationsdatenbank > Influence of strain on binding energies of Si atoms at Ge(111) surfaces > print |
| Hauptseite > Publikationsdatenbank > Influence of strain on binding energies of Si atoms at Ge(111) surfaces > print |
| 001 | 24641 | ||
| 005 | 20180210144204.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0039-6028(02)01684-9 |
| 024 | 7 | _ | |2 WOS |a WOS:000176646200003 |
| 037 | _ | _ | |a PreJuSER-24641 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Chemistry, Physical |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Filimonov, S. N. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Influence of strain on binding energies of Si atoms at Ge(111) surfaces |
| 260 | _ | _ | |a Amsterdam |b Elsevier |c 2002 |
| 300 | _ | _ | |a L335 - L340 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Surface Science |x 0039-6028 |0 5673 |v 512 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated Ge surface covered with a monolayer of Bi is studied by scanning tunneling microscopy. Spatial ordering of the islands with respect to the modulations of the strain field shows that the binding energy of Si atoms at strained Si islands is, unexpectedly, higher than at unstrained islands. This behavior is explained by a strong compressive stress of the surfactant layer, which favors an expansion of the underlying surface structures and therefore stabilizes the tensile strained Si islands. It is shown that a Si mass transport towards more strained Si islands can be also favored by an increased binding energy of Si adatoms to the less strained parts of the Ge surface. (C) 2002 Elsevier Science B.V. All rights reserved. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a surface stress |
| 653 | 2 | 0 | |2 Author |a surface diffusion |
| 653 | 2 | 0 | |2 Author |a scanning tunneling microscopy |
| 653 | 2 | 0 | |2 Author |a epitaxy |
| 653 | 2 | 0 | |2 Author |a germanium |
| 653 | 2 | 0 | |2 Author |a silicon |
| 653 | 2 | 0 | |2 Author |a bismuth |
| 653 | 2 | 0 | |2 Author |a semiconductor-semiconductor thin film structures |
| 700 | 1 | _ | |a Voigtländer, B. |b 1 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 773 | _ | _ | |a 10.1016/S0039-6028(02)01684-9 |g Vol. 512, p. L335 - L340 |p L335 - L340 |q 512 |t Surface science |v 512 |y 2002 |x 0039-6028 |
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| 914 | 1 | _ | |y 2002 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)16024 |
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| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
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