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000024642 084__ $$2WoS$$aPhysics, Applied
000024642 1001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b0$$uFZJ
000024642 245__ $$aInfluence of strain on diffusion at Ge(111) surfaces
000024642 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2002
000024642 300__ $$a25
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000024642 440_0 $$0562$$aApplied Physics Letters$$v81$$x0003-6951
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000024642 520__ $$aThe measurement of the density of two-dimensional islands by scanning tunneling microscopy after submonolayer growth is used to determine the strain dependence of surface diffusion. Templates of strained and relaxed Ge surfaces with the same surface reconstruction are prepared for comparison. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of the Ge(111) substrate. When the strain increases from relaxed Ge to Ge strained to the Si lattice constant, the diffusion barrier is estimated to increase by similar to60 meV. (C) 2002 American Institute of Physics.
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000024642 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b1$$uFZJ
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