TY  - JOUR
AU  - Cherepanov, V.
AU  - Voigtländer, B.
TI  - Influence of strain on diffusion at Ge(111) surfaces
JO  - Applied physics letters
VL  - 81
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-24642
SP  - 25
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - The measurement of the density of two-dimensional islands by scanning tunneling microscopy after submonolayer growth is used to determine the strain dependence of surface diffusion. Templates of strained and relaxed Ge surfaces with the same surface reconstruction are prepared for comparison. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of the Ge(111) substrate. When the strain increases from relaxed Ge to Ge strained to the Si lattice constant, the diffusion barrier is estimated to increase by similar to60 meV. (C) 2002 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000179731000021
DO  - DOI:10.1063/1.1530730
UR  - https://juser.fz-juelich.de/record/24642
ER  -