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@ARTICLE{Cherepanov:24642,
author = {Cherepanov, V. and Voigtländer, B.},
title = {{I}nfluence of strain on diffusion at {G}e(111) surfaces},
journal = {Applied physics letters},
volume = {81},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-24642},
pages = {25},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {The measurement of the density of two-dimensional islands
by scanning tunneling microscopy after submonolayer growth
is used to determine the strain dependence of surface
diffusion. Templates of strained and relaxed Ge surfaces
with the same surface reconstruction are prepared for
comparison. The diffusion barrier for Ge and Si adatoms is
found to increase with increasing compressive strain of the
Ge(111) substrate. When the strain increases from relaxed Ge
to Ge strained to the Si lattice constant, the diffusion
barrier is estimated to increase by similar to60 meV. (C)
2002 American Institute of Physics.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {530},
cid = {I:(DE-Juel1)VDB43},
pnm = {Methoden und Systeme der Informationstechnik},
pid = {G:(DE-Juel1)FUEK253},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000179731000021},
doi = {10.1063/1.1530730},
url = {https://juser.fz-juelich.de/record/24642},
}