000025273 001__ 25273
000025273 005__ 20180210130639.0
000025273 0247_ $$2DOI$$a10.1016/S0039-6028(01)01897-0
000025273 0247_ $$2WOS$$aWOS:000175383700009
000025273 037__ $$aPreJuSER-25273
000025273 041__ $$aeng
000025273 082__ $$a540
000025273 084__ $$2WoS$$aChemistry, Physical
000025273 084__ $$2WoS$$aPhysics, Condensed Matter
000025273 1001_ $$0P:(DE-Juel1)VDB5526$$aJeliazova, Y.$$b0$$uFZJ
000025273 245__ $$aVibrational properties of ultrathin Ga2O3 films grown on Ni(100)
000025273 260__ $$aAmsterdam$$bElsevier$$c2002
000025273 300__ $$a51 - 57
000025273 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000025273 3367_ $$2DataCite$$aOutput Types/Journal article
000025273 3367_ $$00$$2EndNote$$aJournal Article
000025273 3367_ $$2BibTeX$$aARTICLE
000025273 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000025273 3367_ $$2DRIVER$$aarticle
000025273 440_0 $$05673$$aSurface Science$$v502-503$$x0039-6028
000025273 500__ $$aRecord converted from VDB: 12.11.2012
000025273 520__ $$aGrowth and vibrational properties of ultrathin films of Ga2O3 on Ni(100) were investigated in the temperature range of 80-1200 K by using electron energy loss spectroscopy (EELS), Auger electron spectroscopy, and low energy electron diffraction (LEED). At 80 K, a 30 Angstrom thick Ga layer was deposited on the c(2 x 2)-oxygen structure prepared on Ni(I 00). Afterwards, the Ga layer was oxidized with oxygen until saturation. At 80 K, both the Ga layer and the oxidized Ga layer are amorphous. After annealing to room temperature a energy loss at similar to640 cm(-1) occurs. This loss is assigned to a vibrational excitation of Ga-O bonds in the Ga-oxide structure. Further annealing up to 700 K leads to the characteristic Fuchs-Kliever phonons of Ga2O3 at 305, 470 and 745 cm(-1) in the EEL spectrum and the LEED pattern of Ga oxide shows a weak diffuse ring structure of domains with long-range order but random orientation with respect to the substrate. The lattice constant is determined to be 2.8 Angstrom which corresponds to the distance between two O2- ions in the oxide lattice. (C) 2002 Elsevier Science B.V. All rights reserved.
000025273 536__ $$0G:(DE-Juel1)FUEK242$$2G:(DE-HGF)$$aKondensierte Materie$$cM02$$x0
000025273 588__ $$aDataset connected to Web of Science
000025273 650_7 $$2WoSType$$aJ
000025273 65320 $$2Author$$agallium
000025273 65320 $$2Author$$anickel
000025273 65320 $$2Author$$aoxidation
000025273 65320 $$2Author$$aelectron energy loss spectroscopy (EELS)
000025273 65320 $$2Author$$aauger electron spectroscopy
000025273 65320 $$2Author$$alow energy electron diffraction (LEED)
000025273 65320 $$2Author$$asurface structure, morphology, roughness
000025273 65320 $$2Author$$aand topography
000025273 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b1$$uFZJ
000025273 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/S0039-6028(01)01897-0$$gVol. 502-503, p. 51 - 57$$p51 - 57$$q502-503<51 - 57$$tSurface science$$v502-503$$x0039-6028$$y2002
000025273 909CO $$ooai:juser.fz-juelich.de:25273$$pVDB
000025273 9131_ $$0G:(DE-Juel1)FUEK242$$bMaterie$$kM02$$lKondensierte Materie$$vKondensierte Materie$$x0
000025273 9141_ $$y2002
000025273 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000025273 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000025273 970__ $$aVDB:(DE-Juel1)16474
000025273 980__ $$aVDB
000025273 980__ $$aConvertedRecord
000025273 980__ $$ajournal
000025273 980__ $$aI:(DE-Juel1)PGI-3-20110106
000025273 980__ $$aUNRESTRICTED
000025273 981__ $$aI:(DE-Juel1)PGI-3-20110106