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@ARTICLE{Jeliazova:25273,
      author       = {Jeliazova, Y. and Franchy, R.},
      title        = {{V}ibrational properties of ultrathin {G}a2{O}3 films grown
                      on {N}i(100)},
      journal      = {Surface science},
      volume       = {502-503},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-25273},
      pages        = {51 - 57},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Growth and vibrational properties of ultrathin films of
                      Ga2O3 on Ni(100) were investigated in the temperature range
                      of 80-1200 K by using electron energy loss spectroscopy
                      (EELS), Auger electron spectroscopy, and low energy electron
                      diffraction (LEED). At 80 K, a 30 Angstrom thick Ga layer
                      was deposited on the c(2 x 2)-oxygen structure prepared on
                      Ni(I 00). Afterwards, the Ga layer was oxidized with oxygen
                      until saturation. At 80 K, both the Ga layer and the
                      oxidized Ga layer are amorphous. After annealing to room
                      temperature a energy loss at similar to640 cm(-1) occurs.
                      This loss is assigned to a vibrational excitation of Ga-O
                      bonds in the Ga-oxide structure. Further annealing up to 700
                      K leads to the characteristic Fuchs-Kliever phonons of Ga2O3
                      at 305, 470 and 745 cm(-1) in the EEL spectrum and the LEED
                      pattern of Ga oxide shows a weak diffuse ring structure of
                      domains with long-range order but random orientation with
                      respect to the substrate. The lattice constant is determined
                      to be 2.8 Angstrom which corresponds to the distance between
                      two O2- ions in the oxide lattice. (C) 2002 Elsevier Science
                      B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000175383700009},
      doi          = {10.1016/S0039-6028(01)01897-0},
      url          = {https://juser.fz-juelich.de/record/25273},
}