Hauptseite > Publikationsdatenbank > Light Management in Silicon Heterojunction Solar Cells via Nanocrystalline Silicon Oxide Films and Nano-Imprint Textures > print

001     255639
005     20240708133644.0
037 _ _ |a FZJ-2015-05773
041 _ _ |a English
100 1 _ |a Richter, Alexei
|0 P:(DE-Juel1)162140
|b 0
|e Corresponding author
|u fzj
111 2 _ |a 26th International Conference on Amorphous and Nanocrystalline Semiconductors
|g ICANS26
|c Aachen
|d 2015-09-13 - 2015-09-18
|w Germany
245 _ _ |a Light Management in Silicon Heterojunction Solar Cells via Nanocrystalline Silicon Oxide Films and Nano-Imprint Textures
260 _ _ |c 2015
336 7 _ |a Conference Presentation
|b conf
|m conf
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|s 1446652115_12658
|2 PUB:(DE-HGF)
|x Other
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
520 _ _ |a Excellent light management is essential to increase the amount of light being captured in the absorber of silicon heterojunction solar cells in order to obtain a high photoelectric current. Three possible ways to achieve this are improving the cell anti-reflectance, increasing the light path through the absorber material, and minimizing the parasitic losses in the other layers. The former two goals can be realized via surface texturing and the latter by using highly transparent materials. In this study, we focus on implementing hydrogenated nanocrystalline silicon oxide (nc‑SiOx:H) in combination with front side nano-imprint textures in silicon heterojuction solar cells. Nc‑SiOx:H offering a unique combination of high conductivity and high transparency is perfectly suited as an alternative wide-gap doped layer to minimize parasitic absorption. At the same time, nano-imprint technology provides a way to realize various textures on “flat” silicon solar cells without inevitably promoting recombination at the absorber interface by enlarging the surface area and increasing the number of defect states. We show by a systematic investigation how the interplay between the imprinted layer and the underlying thin films of the silicon heterojunction based solar cell affects the generated current. Ultimately, we demonstrate very high current densities and efficiencies beyond 20% without wet-chemically texturing the Si-wafer by combining the benefits of the highly transparent nanocrystalline silicon oxide layers and the favourable properties of the nano-imprint technology.
536 _ _ |a 121 - Solar cells of the next generation (POF3-121)
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|c POF3-121
|f POF III
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536 _ _ |0 G:(DE-Juel1)HITEC-20170406
|x 1
|c HITEC-20170406
|a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)
700 1 _ |a Lentz, Florian
|0 P:(DE-Juel1)130795
|b 1
|u fzj
700 1 _ |a Meier, Matthias
|0 P:(DE-Juel1)130830
|b 2
|u fzj
700 1 _ |a Ding, Kaining
|0 P:(DE-Juel1)130233
|b 3
|u fzj
909 C O |o oai:juser.fz-juelich.de:255639
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910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)162140
910 1 _ |a Forschungszentrum Jülich GmbH
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910 1 _ |a Forschungszentrum Jülich GmbH
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 1 _ |a DE-HGF
|l Erneuerbare Energien
|1 G:(DE-HGF)POF3-120
|0 G:(DE-HGF)POF3-121
|2 G:(DE-HGF)POF3-100
|v Solar cells of the next generation
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
|b Energie
914 1 _ |y 2015
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)IEK-5-20101013
|k IEK-5
|l Photovoltaik
|x 0
980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IMD-3-20101013

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