TY  - JOUR
AU  - Xu, T.
AU  - Wei, M. J.
AU  - Capiod, P.
AU  - Díaz Álvarez, A.
AU  - Han, X. L.
AU  - Troadec, D.
AU  - Nys, J. P.
AU  - Berthe, M.
AU  - Lefebvre, I.
AU  - Patriarche, G.
AU  - Plissard, S. R.
AU  - Caroff, P.
AU  - Ebert, Ph.
AU  - Grandidier, B.
TI  - Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
JO  - Applied physics letters
VL  - 107
IS  - 11
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-06018
SP  - 112102 -
PY  - 2015
AB  - The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81 Sb 19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs 81 Sb 19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs 81 Sb 19 core and the GaAs shell and identifies it as a type I band alignment.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000361639200022
DO  - DOI:10.1063/1.4930991
UR  - https://juser.fz-juelich.de/record/255939
ER  -