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@PHDTHESIS{Wirths:256092,
      author       = {Wirths, Stephan},
      title        = {{G}roup {IV} {E}pitaxy for {A}dvanced {N}ano- and
                      {O}ptoelectronic {A}pplications},
      volume       = {123},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2015-06112},
      isbn         = {978-3-95806-132-3},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {VI, 116, XXX S.},
      year         = {2016},
      note         = {RWTH Aachen, Diss., 2015},
      abstract     = {Sn-based group IV semiconductors have attracted increasing
                      scientific interest during the last decade due to their
                      exciting electronic properties, such as a fundamental direct
                      bandgap or high carrier mobility. Whereas these properties
                      have been predicted already in the early 1980’s, the
                      quality of epitaxially grown GeSn and SiGeSn layers on Si
                      and Ge substrates has been limited owing to the low solid
                      solubility of Sn in (Si)Ge (<1 $at.\%)$ and the large
                      lattice mismatch (>15 $\%).$ Hence, the enormous potential
                      of these material systems regarding its implementation in
                      nano- and optoelectronics has not been exploited to date. A
                      low temperature reduced pressure chemical vapour process
                      using commercially available Ge- and Sn-precursors, namely
                      Ge$_{2}$H$_{6}$ and SnCl$_{4}$, is developed for the growth
                      of GeSn and SiGeSn epilayers directly on Si(001) and on
                      Ge-buffered Si(001). Sn concentrations far beyond the solid
                      solubility of Sn in (Si)Ge are achieved. High growth rates
                      at low growth temperatures assure exceptionally high
                      monocrystalline quality evidenced by exhaustive layer
                      characterization, i.e. transmission electron microscopy,
                      Rutherford backscattering spectrometry, X-ray diffraction or
                      photoluminescence. Moreover, it is shown that the plastic
                      strain relaxation of these (Si)GeSn epilayers on Ge/Si(001)
                      takes place mostly via edge dislocations rather than via
                      threading dislocations as well-known in other group IV
                      systems, i.e. SiGe/Ge. Subsequently, dedicated
                      heterostructures are used for admittance and optical
                      characterization. Highly biaxially tensile strained Ge and
                      GeSn layers grown on GeSn strain relaxed buffer layers are
                      used to fabricate metal oxide semiconductor capacitors in
                      order to investigate the interfacial quality between these
                      narrow bandgap semiconductors and high-k dielectrics. For
                      the investigation of the Nickel metallization process of
                      GeSn and SiGeSn epilayers, Sn concentration above 10 at.\%
                      are used. Furthermore, the transition from an indirect to a
                      fundamental direct group IV semiconductor is presented by
                      means of temperature dependent PL measurements on a set of
                      high Sn content GeSn epilayers. Strain relaxed GeSn layers
                      with a Sn concentration of 12.6 at.\% grown on Si(001)
                      substrates exhibit high modal gain values at cryogenic
                      temperatures. Finally, the first demonstration of lasing
                      action in direct bandgap group IV Fabry-Perot cavities is
                      presented.},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2016063005},
      url          = {https://juser.fz-juelich.de/record/256092},
}