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@ARTICLE{Paik:256223,
      author       = {Paik, Hanjong and Moyer, Jarrett A. and Spila, Timothy and
                      Tashman, Joshua W. and Mundy, Julia A. and Freeman, Eugene
                      and Shukla, Nikhil and Lapano, Jason M. and Engel-Herbert,
                      Roman and Zander, Willi and Schubert, Jürgen and Muller,
                      David A. and Datta, Suman and Schiffer, Peter and Schlom,
                      Darrell G.},
      title        = {{T}ransport properties of ultra-thin {VO}2 films on (001)
                      {T}i{O}2 grown by reactive molecular-beam epitaxy},
      journal      = {Applied physics letters},
      volume       = {107},
      number       = {16},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-06199},
      pages        = {163101 -},
      year         = {2015},
      abstract     = {We report the growth of (001)-oriented VO2 films as thin as
                      1.5 nm with abrupt and reproduciblemetal-insulator
                      transitions (MIT) without a capping layer. Limitations to
                      the growth of thinnerfilms with sharp MITs are discussed,
                      including the Volmer-Weber type growth mode due to thehigh
                      energy of the (001) VO2 surface. Another key limitation is
                      interdiffusion with the (001) TiO2substrate, which we
                      quantify using low angle annular dark field scanning
                      transmission electronmicroscopy in conjunction with electron
                      energy loss spectroscopy. We find that controlling
                      islandcoalescence on the (001) surface and minimization of
                      cation interdiffusion by using a low growthtemperature
                      followed by a brief anneal at higher temperature are crucial
                      for realizing ultrathin VO2films with abrupt MIT behavior.
                      VC 2015 AIP Publishing LLC.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363781900023},
      doi          = {10.1063/1.4932123},
      url          = {https://juser.fz-juelich.de/record/256223},
}