%0 Journal Article
%A Baeumer, Christoph
%A Schmitz, Christoph
%A Ramadan, Amr H. H.
%A Du, Hongchu
%A Skaja, Katharina
%A Feyer, Vitaliy
%A Müller, Philipp
%A Arndt, Benedikt
%A Jia, Chun-Lin
%A Mayer, Joachim
%A De Souza, Roger A.
%A Michael Schneider, Claus
%A Waser, Rainer
%A Dittmann, Regina
%T Spectromicroscopic insights for rational design of redox-based memristive devices
%J Nature Communications
%V 6
%@ 2041-1723
%C London
%I Nature Publishing Group
%M FZJ-2015-06214
%P 8610 -
%D 2015
%X The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000364934200012
%$ pmid:26477940
%R 10.1038/ncomms9610
%U https://juser.fz-juelich.de/record/256245