TY  - JOUR
AU  - Baeumer, Christoph
AU  - Schmitz, Christoph
AU  - Ramadan, Amr H. H.
AU  - Du, Hongchu
AU  - Skaja, Katharina
AU  - Feyer, Vitaliy
AU  - Müller, Philipp
AU  - Arndt, Benedikt
AU  - Jia, Chun-Lin
AU  - Mayer, Joachim
AU  - De Souza, Roger A.
AU  - Michael Schneider, Claus
AU  - Waser, Rainer
AU  - Dittmann, Regina
TI  - Spectromicroscopic insights for rational design of redox-based memristive devices
JO  - Nature Communications
VL  - 6
SN  - 2041-1723
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2015-06214
SP  - 8610 -
PY  - 2015
AB  - The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000364934200012
C6  - pmid:26477940
DO  - DOI:10.1038/ncomms9610
UR  - https://juser.fz-juelich.de/record/256245
ER  -