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@ARTICLE{Baeumer:256245,
      author       = {Baeumer, Christoph and Schmitz, Christoph and Ramadan, Amr
                      H. H. and Du, Hongchu and Skaja, Katharina and Feyer,
                      Vitaliy and Müller, Philipp and Arndt, Benedikt and Jia,
                      Chun-Lin and Mayer, Joachim and De Souza, Roger A. and
                      Michael Schneider, Claus and Waser, Rainer and Dittmann,
                      Regina},
      title        = {{S}pectromicroscopic insights for rational design of
                      redox-based memristive devices},
      journal      = {Nature Communications},
      volume       = {6},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2015-06214},
      pages        = {8610 -},
      year         = {2015},
      abstract     = {The demand for highly scalable, low-power devices for data
                      storage and logic operations is strongly stimulating
                      research into resistive switching as a novel concept for
                      future non-volatile memory devices. To meet technological
                      requirements, it is imperative to have a set of material
                      design rules based on fundamental material physics, but
                      deriving such rules is proving challenging. Here, we
                      elucidate both switching mechanism and failure mechanism in
                      the valence-change model material SrTiO3, and on this basis
                      we derive a design rule for failure-resistant devices.
                      Spectromicroscopy reveals that the resistance change during
                      device operation and failure is indeed caused by nanoscale
                      oxygen migration resulting in localized valence changes
                      between Ti4+ and Ti3+. While fast reoxidation typically
                      results in retention failure in SrTiO3, local phase
                      separation within the switching filament stabilizes the
                      retention. Mimicking this phase separation by intentionally
                      introducing retention-stabilization layers with slow oxygen
                      transport improves retention times considerably.},
      cin          = {PGI-7 / PGI-6 / PGI-5 / JARA-FIT},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)PGI-5-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000364934200012},
      pubmed       = {pmid:26477940},
      doi          = {10.1038/ncomms9610},
      url          = {https://juser.fz-juelich.de/record/256245},
}