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| 001 | 256245 | ||
| 005 | 20240610121230.0 | ||
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| 100 | 1 | _ | |a Baeumer, Christoph |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Spectromicroscopic insights for rational design of redox-based memristive devices |
| 260 | _ | _ | |a London |c 2015 |b Nature Publishing Group |
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| 520 | _ | _ | |a The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably. |
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| 700 | 1 | _ | |a Du, Hongchu |0 P:(DE-Juel1)145710 |b 3 |u fzj |
| 700 | 1 | _ | |a Skaja, Katharina |0 P:(DE-Juel1)145428 |b 4 |u fzj |
| 700 | 1 | _ | |a Feyer, Vitaliy |0 P:(DE-Juel1)145012 |b 5 |u fzj |
| 700 | 1 | _ | |a Müller, Philipp |0 P:(DE-Juel1)164365 |b 6 |
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| 700 | 1 | _ | |a Jia, Chun-Lin |0 P:(DE-Juel1)130736 |b 8 |u fzj |
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| 700 | 1 | _ | |a Michael Schneider, Claus |0 P:(DE-HGF)0 |b 11 |
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| 700 | 1 | _ | |a Dittmann, Regina |0 P:(DE-Juel1)130620 |b 13 |u fzj |
| 773 | _ | _ | |a 10.1038/ncomms9610 |g Vol. 6, p. 8610 - |0 PERI:(DE-600)2553671-0 |p 8610 - |t Nature Communications |v 6 |y 2015 |x 2041-1723 |
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