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@ARTICLE{Siemon:256280,
      author       = {Siemon, Anne and Breuer, Thomas and Aslam, Nabeel and
                      Ferch, Sebastian and Kim, Wonjoo and van den Hurk, Jan and
                      Rana, Vikas and Hoffmann-Eifert, Susanne and Waser, Rainer
                      and Menzel, Stephan and Linn, Eike},
      title        = {{R}ealization of {B}oolean {L}ogic {F}unctionality {U}sing
                      {R}edox-{B}ased {M}emristive {D}evices},
      journal      = {Advanced functional materials},
      volume       = {25},
      number       = {40},
      issn         = {1057-9257},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-06244},
      pages        = {6414 - 6423},
      year         = {2015},
      abstract     = {Emerging resistively switching devices are thought to
                      enable ultradense passive nanocrossbar arrays for use as
                      random access memories (ReRAM) by the end of the decade,
                      both for embedded and mass storage applications. Moreover,
                      ReRAMs offer inherent logic-in-memory (LIM) capabilities due
                      to the nonvolatility of the devices and therefore great
                      potential to reduce the communication between memory and
                      calculation unit by alleviating the so-called von Neumann
                      bottleneck. A single bipolar resistive switching device is
                      capable of performing 14 of 16 two input logic functions in
                      the logic concept presented by Linn et al.
                      (“CRS-logic”). In this paper, five types of selectorless
                      devices are considered to validate this CRS-logic concept is
                      experimentally by means of the IMP and AND logic operations.
                      As reference device a TaO x -based ReRAM cell is considered,
                      which is compared to three more advanced device
                      configurations consisting either of a threshold supported
                      resistive switch (TS-ReRAM), a complementary switching
                      device (CS), or a complementary resistive switch (CRS). It
                      is shown that all of these devices offer the desired LIM
                      behavior. Moreover, the feasibility of XOR and XNOR
                      operations using a modified logic concept is applied for
                      both CS and CRS devices and the pros and cons are
                      discussed.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363685900013},
      doi          = {10.1002/adfm.201500865},
      url          = {https://juser.fz-juelich.de/record/256280},
}