000256335 001__ 256335
000256335 005__ 20210129220656.0
000256335 0247_ $$2doi$$a10.1002/adfm.201500851
000256335 0247_ $$2ISSN$$a1057-9257
000256335 0247_ $$2ISSN$$a1099-0712
000256335 0247_ $$2ISSN$$a1616-301X
000256335 0247_ $$2ISSN$$a1616-3028
000256335 0247_ $$2WOS$$aWOS:000363685900006
000256335 037__ $$aFZJ-2015-06295
000256335 041__ $$aEnglish
000256335 082__ $$a620
000256335 1001_ $$0P:(DE-Juel1)138081$$aLenser, Christian$$b0
000256335 245__ $$aFormation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO $_{3}$ Thin Film Devices
000256335 260__ $$aWeinheim$$bWiley-VCH$$c2015
000256335 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1449740711_5826
000256335 3367_ $$2DataCite$$aOutput Types/Journal article
000256335 3367_ $$00$$2EndNote$$aJournal Article
000256335 3367_ $$2BibTeX$$aARTICLE
000256335 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000256335 3367_ $$2DRIVER$$aarticle
000256335 520__ $$aThe resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen-deficient, highly electron-doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal–insulator–metal structures fabricated from a thin Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3 crystals are investigated by photoemission electron microscopy, transmission electron microscopy, and hard X-ray photoelectron spectroscopy in order to gain a deeper understanding of cation movement in this specific system. During electroforming, the segregation of Sr to the top interface and the generation of defect-rich cones in the film are observed, apparently growing from the anode toward the cathode during electroforming. An unusual binding energy component of the Sr 3d emission line is observed which can be assigned to inline image defect complexes by performing ab initio calculations. Since this Sr component can be reversibly affected by an external electrical bias, the movement of both oxygen and Sr point defects and the formation of defect complexes inline image during resistive switching are suggested. These findings are discussed with regard to the point defect structure of the film and the local oxidation of the donor-doped substrate. In particular, the apparent dichotomy between the observation of acceptor-type defects and increased electronic conductivity in STO is addressed.
000256335 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000256335 536__ $$0G:(DE-HGF)POF3-142$$a142 - Controlling Spin-Based Phenomena (POF3-142)$$cPOF3-142$$fPOF III$$x1
000256335 588__ $$aDataset connected to CrossRef
000256335 7001_ $$0P:(DE-HGF)0$$aKoehl, Annemarie$$b1
000256335 7001_ $$0P:(DE-Juel1)130975$$aSlipukhina, Ivetta$$b2
000256335 7001_ $$0P:(DE-Juel1)145710$$aDu, Hongchu$$b3
000256335 7001_ $$0P:(DE-Juel1)141640$$aPatt, Marten$$b4
000256335 7001_ $$0P:(DE-Juel1)145012$$aFeyer, Vitaliy$$b5
000256335 7001_ $$0P:(DE-Juel1)130948$$aSchneider, Claus M.$$b6
000256335 7001_ $$0P:(DE-Juel1)130799$$aLezaic, Marjana$$b7
000256335 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b8$$ufzj
000256335 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b9$$eCorresponding author
000256335 773__ $$0PERI:(DE-600)2039420-2$$a10.1002/adfm.201500851$$gVol. 25, no. 40, p. 6360 - 6368$$n40$$p6360 - 6368$$tAdvanced functional materials$$v25$$x1616-301X$$y2015
000256335 909CO $$ooai:juser.fz-juelich.de:256335$$pVDB
000256335 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000256335 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bADV FUNCT MATER : 2014
000256335 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000256335 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000256335 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000256335 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000256335 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000256335 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000256335 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000256335 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000256335 915__ $$0StatID:(DE-HGF)9910$$2StatID$$aIF >= 10$$bADV FUNCT MATER : 2014
000256335 9141_ $$y2015
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138081$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130975$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145710$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141640$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145012$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130948$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130799$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000256335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000256335 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000256335 9131_ $$0G:(DE-HGF)POF3-142$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x1
000256335 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000256335 9201_ $$0I:(DE-Juel1)IAS-1-20090406$$kIAS-1$$lQuanten-Theorie der Materialien$$x1
000256335 9201_ $$0I:(DE-Juel1)PGI-1-20110106$$kPGI-1$$lQuanten-Theorie der Materialien$$x2
000256335 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x3
000256335 980__ $$ajournal
000256335 980__ $$aVDB
000256335 980__ $$aI:(DE-Juel1)PGI-6-20110106
000256335 980__ $$aI:(DE-Juel1)IAS-1-20090406
000256335 980__ $$aI:(DE-Juel1)PGI-1-20110106
000256335 980__ $$aI:(DE-Juel1)PGI-7-20110106
000256335 980__ $$aUNRESTRICTED
000256335 981__ $$aI:(DE-Juel1)IAS-1-20090406
000256335 981__ $$aI:(DE-Juel1)PGI-1-20110106
000256335 981__ $$aI:(DE-Juel1)PGI-7-20110106