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@ARTICLE{Lenser:256335,
      author       = {Lenser, Christian and Koehl, Annemarie and Slipukhina,
                      Ivetta and Du, Hongchu and Patt, Marten and Feyer, Vitaliy
                      and Schneider, Claus M. and Lezaic, Marjana and Waser, R.
                      and Dittmann, Regina},
      title        = {{F}ormation and {M}ovement of {C}ationic {D}efects {D}uring
                      {F}orming and {R}esistive {S}witching in {S}r{T}i{O} $_{3}$
                      {T}hin {F}ilm {D}evices},
      journal      = {Advanced functional materials},
      volume       = {25},
      number       = {40},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-06295},
      pages        = {6360 - 6368},
      year         = {2015},
      abstract     = {The resistance switching phenomenon in many transition
                      metal oxides is described by ion motion leading to the
                      formation of oxygen-deficient, highly electron-doped
                      filaments. In this paper, the interface and subinterface
                      region of electroformed and switched
                      metal–insulator–metal structures fabricated from a thin
                      Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3
                      crystals are investigated by photoemission electron
                      microscopy, transmission electron microscopy, and hard X-ray
                      photoelectron spectroscopy in order to gain a deeper
                      understanding of cation movement in this specific system.
                      During electroforming, the segregation of Sr to the top
                      interface and the generation of defect-rich cones in the
                      film are observed, apparently growing from the anode toward
                      the cathode during electroforming. An unusual binding energy
                      component of the Sr 3d emission line is observed which can
                      be assigned to inline image defect complexes by performing
                      ab initio calculations. Since this Sr component can be
                      reversibly affected by an external electrical bias, the
                      movement of both oxygen and Sr point defects and the
                      formation of defect complexes inline image during resistive
                      switching are suggested. These findings are discussed with
                      regard to the point defect structure of the film and the
                      local oxidation of the donor-doped substrate. In particular,
                      the apparent dichotomy between the observation of
                      acceptor-type defects and increased electronic conductivity
                      in STO is addressed.},
      cin          = {PGI-6 / IAS-1 / PGI-1 / PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)IAS-1-20090406 /
                      I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522) / 142 -
                      Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-522 / G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363685900006},
      doi          = {10.1002/adfm.201500851},
      url          = {https://juser.fz-juelich.de/record/256335},
}