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| Home > Publications database > Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO $_{3}$ Thin Film Devices > print |
| 001 | 256335 | ||
| 005 | 20210129220656.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1002/adfm.201500851 |
| 024 | 7 | _ | |2 ISSN |a 1057-9257 |
| 024 | 7 | _ | |2 ISSN |a 1099-0712 |
| 024 | 7 | _ | |2 ISSN |a 1616-301X |
| 024 | 7 | _ | |2 ISSN |a 1616-3028 |
| 024 | 7 | _ | |2 WOS |a WOS:000363685900006 |
| 037 | _ | _ | |a FZJ-2015-06295 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-Juel1)138081 |a Lenser, Christian |b 0 |
| 245 | _ | _ | |a Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO $_{3}$ Thin Film Devices |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2015 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1449740711_5826 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a The resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen-deficient, highly electron-doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal–insulator–metal structures fabricated from a thin Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3 crystals are investigated by photoemission electron microscopy, transmission electron microscopy, and hard X-ray photoelectron spectroscopy in order to gain a deeper understanding of cation movement in this specific system. During electroforming, the segregation of Sr to the top interface and the generation of defect-rich cones in the film are observed, apparently growing from the anode toward the cathode during electroforming. An unusual binding energy component of the Sr 3d emission line is observed which can be assigned to inline image defect complexes by performing ab initio calculations. Since this Sr component can be reversibly affected by an external electrical bias, the movement of both oxygen and Sr point defects and the formation of defect complexes inline image during resistive switching are suggested. These findings are discussed with regard to the point defect structure of the film and the local oxidation of the donor-doped substrate. In particular, the apparent dichotomy between the observation of acceptor-type defects and increased electronic conductivity in STO is addressed. |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-522 |a 522 - Controlling Spin-Based Phenomena (POF3-522) |c POF3-522 |f POF III |x 0 |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-142 |a 142 - Controlling Spin-Based Phenomena (POF3-142) |c POF3-142 |f POF III |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Koehl, Annemarie |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130975 |a Slipukhina, Ivetta |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)145710 |a Du, Hongchu |b 3 |
| 700 | 1 | _ | |0 P:(DE-Juel1)141640 |a Patt, Marten |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)145012 |a Feyer, Vitaliy |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130948 |a Schneider, Claus M. |b 6 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130799 |a Lezaic, Marjana |b 7 |
| 700 | 1 | _ | |0 P:(DE-Juel1)131022 |a Waser, R. |b 8 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)130620 |a Dittmann, Regina |b 9 |e Corresponding author |
| 773 | _ | _ | |0 PERI:(DE-600)2039420-2 |a 10.1002/adfm.201500851 |g Vol. 25, no. 40, p. 6360 - 6368 |n 40 |p 6360 - 6368 |t Advanced functional materials |v 25 |x 1616-301X |y 2015 |
| 909 | C | O | |o oai:juser.fz-juelich.de:256335 |p VDB |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)138081 |a Forschungszentrum Jülich GmbH |b 0 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)130975 |a Forschungszentrum Jülich GmbH |b 2 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)145710 |a Forschungszentrum Jülich GmbH |b 3 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)141640 |a Forschungszentrum Jülich GmbH |b 4 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)145012 |a Forschungszentrum Jülich GmbH |b 5 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)130948 |a Forschungszentrum Jülich GmbH |b 6 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)130799 |a Forschungszentrum Jülich GmbH |b 7 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)131022 |a Forschungszentrum Jülich GmbH |b 8 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)130620 |a Forschungszentrum Jülich GmbH |b 9 |k FZJ |
| 913 | 1 | _ | |0 G:(DE-HGF)POF3-522 |1 G:(DE-HGF)POF3-520 |2 G:(DE-HGF)POF3-500 |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Controlling Spin-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 913 | 1 | _ | |0 G:(DE-HGF)POF3-142 |1 G:(DE-HGF)POF3-140 |2 G:(DE-HGF)POF3-100 |a DE-HGF |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Controlling Spin-Based Phenomena |x 1 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |b Energie |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0200 |2 StatID |a DBCoverage |b SCOPUS |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |b ADV FUNCT MATER : 2014 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0300 |2 StatID |a DBCoverage |b Medline |
| 915 | _ | _ | |0 StatID:(DE-HGF)0310 |2 StatID |a DBCoverage |b NCBI Molecular Biology Database |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |0 StatID:(DE-HGF)0110 |2 StatID |a WoS |b Science Citation Index |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)1150 |2 StatID |a DBCoverage |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |0 StatID:(DE-HGF)1160 |2 StatID |a DBCoverage |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |0 StatID:(DE-HGF)9910 |2 StatID |a IF >= 10 |b ADV FUNCT MATER : 2014 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |k PGI-6 |l Elektronische Eigenschaften |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)IAS-1-20090406 |k IAS-1 |l Quanten-Theorie der Materialien |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-1-20110106 |k PGI-1 |l Quanten-Theorie der Materialien |x 2 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 3 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)IAS-1-20090406 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-1-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IAS-1-20090406 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-1-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
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