TY  - JOUR
AU  - Heedt, Sebastian
AU  - Otto, Isabel
AU  - Sladek, Kamil
AU  - Hardtdegen, Hilde
AU  - Schubert, Jürgen
AU  - Demarina, Nataliya
AU  - Lüth, Hans
AU  - Grützmacher, Detlev
AU  - Schäpers, Thomas
TI  - Resolving ambiguities in nanowire field-effect transistor characterization
JO  - Nanoscale
VL  - 7
IS  - 43
SN  - 2040-3372
CY  - Cambridge
PB  - RSC Publ.
M1  - FZJ-2015-06368
SP  - 18188 - 18197
PY  - 2015
AB  - We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution and gate action. The effective electrostatic gate width and screening effects are taken into account. A pivotal aspect is that the gate coupling to the nanowire is compromised by the concurrent coupling of the gate electrode to the surface/interface states, which provide the vast majority of carriers for undoped nanowires. In conjunction with field-effect transistor (FET) measurements using two gates with distinctly dissimilar couplings, the study reveals the density of surface states that gives rise to a shallow quantum well at the surface. Both gates yield identical results for the electron concentration and mobility only at the actual surface state density. Our method remedies the flaws of conventional FET analysis and provides a straightforward alternative to intricate Hall effect measurements on nanowires.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000364048900025
DO  - DOI:10.1039/C5NR03608A
UR  - https://juser.fz-juelich.de/record/256461
ER  -