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@ARTICLE{Heedt:256461,
      author       = {Heedt, Sebastian and Otto, Isabel and Sladek, Kamil and
                      Hardtdegen, Hilde and Schubert, Jürgen and Demarina,
                      Nataliya and Lüth, Hans and Grützmacher, Detlev and
                      Schäpers, Thomas},
      title        = {{R}esolving ambiguities in nanowire field-effect transistor
                      characterization},
      journal      = {Nanoscale},
      volume       = {7},
      number       = {43},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2015-06368},
      pages        = {18188 - 18197},
      year         = {2015},
      abstract     = {We have modeled InAs nanowires using finite element methods
                      considering the actual device geometry, the semiconducting
                      nature of the channel and surface states, providing a
                      comprehensive picture of charge distribution and gate
                      action. The effective electrostatic gate width and screening
                      effects are taken into account. A pivotal aspect is that the
                      gate coupling to the nanowire is compromised by the
                      concurrent coupling of the gate electrode to the
                      surface/interface states, which provide the vast majority of
                      carriers for undoped nanowires. In conjunction with
                      field-effect transistor (FET) measurements using two gates
                      with distinctly dissimilar couplings, the study reveals the
                      density of surface states that gives rise to a shallow
                      quantum well at the surface. Both gates yield identical
                      results for the electron concentration and mobility only at
                      the actual surface state density. Our method remedies the
                      flaws of conventional FET analysis and provides a
                      straightforward alternative to intricate Hall effect
                      measurements on nanowires.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000364048900025},
      doi          = {10.1039/C5NR03608A},
      url          = {https://juser.fz-juelich.de/record/256461},
}