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@ARTICLE{Schmidt:256592,
      author       = {Schmidt, Dirk Oliver and Hoffmann-Eifert, Susanne and
                      Zhang, Hehe and La Torre, Camilla and Besmehn, Astrid and
                      Noyong, Michael and Waser, Rainer and Simon, Ulrich},
      title        = {{R}esistive {S}witching of {I}ndividual, {C}hemically
                      {S}ynthesized {T}i{O} $_{2}$ {N}anoparticles},
      journal      = {Small},
      volume       = {11},
      number       = {48},
      issn         = {1613-6810},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-06466},
      pages        = {6444–6456},
      year         = {2015},
      abstract     = {Resistively switching devices are considered promising for
                      next-generation nonvolatile random-access memories. Today,
                      such memories are fabricated by means of “top–down
                      approaches” applying thin films sandwiched between
                      nanoscaled electrodes. In contrast, this work presents a
                      “bottom–up approach” disclosing for the first time the
                      resistive switching (RS) of individual TiO2 nanoparticles
                      (NPs). The NPs, which have sizes of 80 and 350 nm,
                      respectively, are obtained by wet chemical synthesis and
                      thermally treated under oxidizing or vacuum conditions for
                      crystallization, respectively. These NPs are deposited on a
                      Pt/Ir bottom electrode and individual NPs are electrically
                      characterized by means of a nanomanipulator system in situ,
                      in a scanning electron microscope. While amorphous NPs and
                      calcined NPs reveal no switching hysteresis, a very
                      interesting behavior is found for the vacuum-annealed,
                      crystalline TiO2–x NPs. These NPs reveal forming-free RS
                      behavior, dominantly complementary switching (CS) and, to a
                      small degree, bipolar switching (BS) characteristics. In
                      contrast, similarly vacuum-annealed TiO2 thin films grown by
                      atomic layer deposition show standard BS behavior under the
                      same conditions. The interesting CS behavior of the TiO2–x
                      NPs is attributed to the formation of a core–shell-like
                      structure by re-oxidation of the reduced NPs as a unique
                      feature.},
      cin          = {PGI-7 / ZEA-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000367917500010},
      doi          = {10.1002/smll.201502100},
      url          = {https://juser.fz-juelich.de/record/256592},
}