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| Hauptseite > Publikationsdatenbank > Silicon based single-photon avalanche diode (SPAD) technologyfor low-light and high-speed applications > print |
| Hauptseite > Publikationsdatenbank > Silicon based single-photon avalanche diode (SPAD) technologyfor low-light and high-speed applications > print |
| 001 | 256598 | ||
| 005 | 20250129092507.0 | ||
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| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Durini, Daniel |0 P:(DE-Juel1)161528 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Silicon based single-photon avalanche diode (SPAD) technologyfor low-light and high-speed applications |
| 260 | _ | _ | |a Cambridge, UK |c 2016 |b Woodhead Publishing, imprint of Elsevier |
| 295 | 1 | 0 | |a Photodetectors. Materials, Devices and Applications |
| 300 | _ | _ | |a 345 - 371 |
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| 336 | 7 | _ | |a INBOOK |2 BibTeX |
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| 490 | 0 | _ | |a Woodhead Publishing Series in Electronic and Optical Materials |v 84 |
| 520 | _ | _ | |a This book covers an important device in this chain, namely, the photodetector (PD) which transfers the information carried by photons to electrons. Silicon based single-photon avalanche diode (SPAD) technology is used for low-light and high-speed applications as reviewed inChapter 11; near single-photon counting and time responses in nanosecond or sub-nanosecond regions are reported. |
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