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@ARTICLE{Marchewka:256607,
      author       = {Marchewka, Astrid and Roesgen, Bernd and Skaja, Katharina
                      and Du, Hongchu and Jia, Chun-Lin and Mayer, Joachim and
                      Rana, Vikas and Waser, Rainer and Menzel, Stephan},
      title        = {{N}anoionic {R}esistive {S}witching {M}emories: {O}n the
                      {P}hysical {N}ature of the {D}ynamic {R}eset {P}rocess},
      journal      = {Advanced Electronic Materials},
      volume       = {2},
      number       = {1},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2015-06474},
      pages        = {n/a - n/a},
      year         = {2016},
      abstract     = {Resistive switching memories based on the valence change
                      mechanism have attracted great attention due to their
                      potential use in future nanoelectronics. The working
                      principle relies on ion migration in an oxide matrix and
                      subsequent nanoscale redox processes leading to a resistance
                      change. While switching from a low resistive to a high
                      resistive state, different intermediate resistance levels
                      can be programmed by changing the maximum applied voltage,
                      making resistive switches highly interesting for multibit
                      data storage and neuromorphic applications. To date, this
                      phenomenon, which is known as gradual reset, has been
                      reported in various experimental studies, but a
                      comprehensive physical understanding of this key phenomenon
                      is missing. Here, a combined experimental and numerical
                      modeling approach is presented to address these issues.
                      Time-resolved pulse measurements are performed to study the
                      reset kinetics in TaOx-based nano-crossbar structures. The
                      results are analyzed using a 2D dynamic model of
                      nonisothermal drift–diffusion transport in the mixed
                      electronic–ionic conducting oxide including the effect of
                      contact potential barriers. The model accurately describes
                      the experimental data and provides physical insights into
                      the processes determining the gradual reset. The gradual
                      nature can be attributed to the temperature-accelerated
                      oxygen-vacancy motion being governed by drift and diffusion
                      processes approaching an equilibrium situation.},
      cin          = {PGI-7 / PGI-5},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000370335000012},
      doi          = {10.1002/aelm.201500233},
      url          = {https://juser.fz-juelich.de/record/256607},
}