TY  - JOUR
AU  - Ritter, S.
AU  - Hoffmann-Eifert, S.
AU  - Bolten, D.
AU  - Waser, R.
TI  - (Pb1-xBax)TiO3 thin films prepared by liquid delivery MOCVD : influence of the process parameters on film formation and electrical properties
JO  - Ferroelectrics
VL  - 268
SN  - 0015-0193
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-25927
SP  - 143 - 148
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - PbTiO3 (PTO) and (Pb1-xBax)TiO3 (PBTO) thin films were deposited by means of liquid delivery MOCVD using an Aixtron AIX-200 horizontal reactor with an ultrasonic nebulizer and a non contact vaporizer. The PBTO films grown on Pt-coated Si substrates at different temperatures show a columnar morphology and a random oriented perovskite structure. Film formation and crystal structure were studied for PBTO films deposited on various substrates, e.g. silicon and MgO, which impose different thermal stresses in the polycrystalline films.The films were investigated using XRD, XRF, AFM and SEM. Electrical characterization with respect to ferroelectric hysteresis behavior was performed in correlation to structural properties of the thin films.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000176861500025
DO  - DOI:10.1080/00150190211044
UR  - https://juser.fz-juelich.de/record/25927
ER  -