% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Ritter:25927,
author = {Ritter, S. and Hoffmann-Eifert, S. and Bolten, D. and
Waser, R.},
title = {({P}b1-x{B}ax){T}i{O}3 thin films prepared by liquid
delivery {MOCVD} : influence of the process parameters on
film formation and electrical properties},
journal = {Ferroelectrics},
volume = {268},
issn = {0015-0193},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-25927},
pages = {143 - 148},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {PbTiO3 (PTO) and (Pb1-xBax)TiO3 (PBTO) thin films were
deposited by means of liquid delivery MOCVD using an Aixtron
AIX-200 horizontal reactor with an ultrasonic nebulizer and
a non contact vaporizer. The PBTO films grown on Pt-coated
Si substrates at different temperatures show a columnar
morphology and a random oriented perovskite structure. Film
formation and crystal structure were studied for PBTO films
deposited on various substrates, e.g. silicon and MgO, which
impose different thermal stresses in the polycrystalline
films.The films were investigated using XRD, XRF, AFM and
SEM. Electrical characterization with respect to
ferroelectric hysteresis behavior was performed in
correlation to structural properties of the thin films.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {530},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Multidisciplinary / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000176861500025},
doi = {10.1080/00150190211044},
url = {https://juser.fz-juelich.de/record/25927},
}