001     25927
005     20180210143006.0
024 7 _ |2 DOI
|a 10.1080/00150190211044
024 7 _ |2 WOS
|a WOS:000176861500025
037 _ _ |a PreJuSER-25927
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Ritter, S.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB15097
245 _ _ |a (Pb1-xBax)TiO3 thin films prepared by liquid delivery MOCVD : influence of the process parameters on film formation and electrical properties
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2002
300 _ _ |a 143 - 148
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Ferroelectrics
|x 0015-0193
|0 2058
|v 268
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a PbTiO3 (PTO) and (Pb1-xBax)TiO3 (PBTO) thin films were deposited by means of liquid delivery MOCVD using an Aixtron AIX-200 horizontal reactor with an ultrasonic nebulizer and a non contact vaporizer. The PBTO films grown on Pt-coated Si substrates at different temperatures show a columnar morphology and a random oriented perovskite structure. Film formation and crystal structure were studied for PBTO films deposited on various substrates, e.g. silicon and MgO, which impose different thermal stresses in the polycrystalline films.The films were investigated using XRD, XRF, AFM and SEM. Electrical characterization with respect to ferroelectric hysteresis behavior was performed in correlation to structural properties of the thin films.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a MOCVD
653 2 0 |2 Author
|a liquid delivery
653 2 0 |2 Author
|a lead titanate
653 2 0 |2 Author
|a (Pb1-xBax)TiO3
653 2 0 |2 Author
|a ferroelectrics
653 2 0 |2 Author
|a thin films
700 1 _ |a Hoffmann-Eifert, S.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB3102
700 1 _ |a Bolten, D.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3025
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1080/00150190211044
|g Vol. 268, p. 143 - 148
|p 143 - 148
|q 268<143 - 148
|0 PERI:(DE-600)2042895-9
|t Ferroelectrics
|v 268
|y 2002
|x 0015-0193
909 C O |o oai:juser.fz-juelich.de:25927
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)17316
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


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