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000025928 084__ $$2WoS$$aMaterials Science, Ceramics
000025928 1001_ $$0P:(DE-HGF)0$$aEmelyanov, A. Y.$$b0
000025928 245__ $$aGrain-boundary effect on the Curie-Weiss law of ferroelectric ceramics and polycrystalline thin films : calculation by the method of effective medium
000025928 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2002
000025928 300__ $$a5 - 16
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000025928 440_0 $$03263$$aJournal of Electroceramics$$v9$$x1385-3449
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000025928 520__ $$aThe influence of grain boundaries on the dielectric properties of ferroelectric ceramics and polycrystalline thin films is described theoretically by the method of effective medium. Grain boundaries are modeled by low-permittivity ("dead") layers, which do not exhibit ferroelectric instability. The effective permittivity of a polycrystalline material is calculated in the paraelectric regime above the transition temperature. The calculations are based on the solution of electrostatic problem for a spherical dielectric inclusion separated from the surrounding dissimilar matrix by a low-permittivity interface layer. For isotropic bulk ceramics, an analytic expression is derived for the effective permittivity as a function of the grain size, dead-layer thickness, and its permittivity. Temperature dependence of the aggregate dielectric response is calculated for BaTiO3 (BT) ceramics of different grain sizes and found to be in good agreement with measurements. It is shown that grain boundaries not only renormalize the Curie-Weiss temperature and constant, but may also cause deviations from the Curie-Weiss law. For BT polycrystalline thin films grown on dissimilar substrates, numerical calculations of the effective dielectric constants are performed, taking into account both the grain-boundary and substrate effects on the film anisotropic dielectric response. Theoretical predictions are compared with the grain size dependence of the permittivity of BT films grown on Pt-coated Si.
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000025928 65320 $$2Author$$aferroelectric ceramics
000025928 65320 $$2Author$$apolycrystalline thin films
000025928 65320 $$2Author$$agrain boundaries
000025928 65320 $$2Author$$adielectric properties
000025928 65320 $$2Author$$aeffective-medium approximation
000025928 7001_ $$0P:(DE-HGF)0$$aPertsev, S.$$b1
000025928 7001_ $$0P:(DE-Juel1)VDB3102$$aHoffmann-Eifert, S.$$b2$$uFZJ
000025928 7001_ $$0P:(DE-HGF)0$$aBoettger, U.$$b3
000025928 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
000025928 773__ $$0PERI:(DE-600)1472395-5$$a10.1023/A:1021665300233$$gVol. 9, p. 5 - 16$$p5 - 16$$q9<5 - 16$$tJournal of electroceramics$$v9$$x1385-3449$$y2002
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000025928 9141_ $$y2002
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000025928 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
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