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@ARTICLE{Emelyanov:25928,
author = {Emelyanov, A. Y. and Pertsev, S. and Hoffmann-Eifert, S.
and Boettger, U. and Waser, R.},
title = {{G}rain-boundary effect on the {C}urie-{W}eiss law of
ferroelectric ceramics and polycrystalline thin films :
calculation by the method of effective medium},
journal = {Journal of electroceramics},
volume = {9},
issn = {1385-3449},
address = {Dordrecht [u.a.]},
publisher = {Springer Science + Business Media B.V},
reportid = {PreJuSER-25928},
pages = {5 - 16},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {The influence of grain boundaries on the dielectric
properties of ferroelectric ceramics and polycrystalline
thin films is described theoretically by the method of
effective medium. Grain boundaries are modeled by
low-permittivity ("dead") layers, which do not exhibit
ferroelectric instability. The effective permittivity of a
polycrystalline material is calculated in the paraelectric
regime above the transition temperature. The calculations
are based on the solution of electrostatic problem for a
spherical dielectric inclusion separated from the
surrounding dissimilar matrix by a low-permittivity
interface layer. For isotropic bulk ceramics, an analytic
expression is derived for the effective permittivity as a
function of the grain size, dead-layer thickness, and its
permittivity. Temperature dependence of the aggregate
dielectric response is calculated for BaTiO3 (BT) ceramics
of different grain sizes and found to be in good agreement
with measurements. It is shown that grain boundaries not
only renormalize the Curie-Weiss temperature and constant,
but may also cause deviations from the Curie-Weiss law. For
BT polycrystalline thin films grown on dissimilar
substrates, numerical calculations of the effective
dielectric constants are performed, taking into account both
the grain-boundary and substrate effects on the film
anisotropic dielectric response. Theoretical predictions are
compared with the grain size dependence of the permittivity
of BT films grown on Pt-coated Si.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {620},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Ceramics},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000179916000001},
doi = {10.1023/A:1021665300233},
url = {https://juser.fz-juelich.de/record/25928},
}