001     25928
005     20180210141844.0
024 7 _ |2 DOI
|a 10.1023/A:1021665300233
024 7 _ |2 WOS
|a WOS:000179916000001
037 _ _ |a PreJuSER-25928
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Materials Science, Ceramics
100 1 _ |a Emelyanov, A. Y.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Grain-boundary effect on the Curie-Weiss law of ferroelectric ceramics and polycrystalline thin films : calculation by the method of effective medium
260 _ _ |a Dordrecht [u.a.]
|b Springer Science + Business Media B.V
|c 2002
300 _ _ |a 5 - 16
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of Electroceramics
|x 1385-3449
|0 3263
|v 9
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The influence of grain boundaries on the dielectric properties of ferroelectric ceramics and polycrystalline thin films is described theoretically by the method of effective medium. Grain boundaries are modeled by low-permittivity ("dead") layers, which do not exhibit ferroelectric instability. The effective permittivity of a polycrystalline material is calculated in the paraelectric regime above the transition temperature. The calculations are based on the solution of electrostatic problem for a spherical dielectric inclusion separated from the surrounding dissimilar matrix by a low-permittivity interface layer. For isotropic bulk ceramics, an analytic expression is derived for the effective permittivity as a function of the grain size, dead-layer thickness, and its permittivity. Temperature dependence of the aggregate dielectric response is calculated for BaTiO3 (BT) ceramics of different grain sizes and found to be in good agreement with measurements. It is shown that grain boundaries not only renormalize the Curie-Weiss temperature and constant, but may also cause deviations from the Curie-Weiss law. For BT polycrystalline thin films grown on dissimilar substrates, numerical calculations of the effective dielectric constants are performed, taking into account both the grain-boundary and substrate effects on the film anisotropic dielectric response. Theoretical predictions are compared with the grain size dependence of the permittivity of BT films grown on Pt-coated Si.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a ferroelectric ceramics
653 2 0 |2 Author
|a polycrystalline thin films
653 2 0 |2 Author
|a grain boundaries
653 2 0 |2 Author
|a dielectric properties
653 2 0 |2 Author
|a effective-medium approximation
700 1 _ |a Pertsev, S.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Hoffmann-Eifert, S.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3102
700 1 _ |a Boettger, U.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1023/A:1021665300233
|g Vol. 9, p. 5 - 16
|p 5 - 16
|q 9<5 - 16
|0 PERI:(DE-600)1472395-5
|t Journal of electroceramics
|v 9
|y 2002
|x 1385-3449
909 C O |o oai:juser.fz-juelich.de:25928
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)17317
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


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