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@ARTICLE{Ohly:25929,
      author       = {Ohly, C. and Hoffmann-Eifert, S. and Szot, K. and Waser,
                      R.},
      title        = {{D}efects in alkaline earth titanate thin films - the
                      conduction behavior of doped {BST}},
      journal      = {Integrated ferroelectrics},
      volume       = {38},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-25929},
      pages        = {229 - 237},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The conduction behavior of doped BST thin films was
                      determined in dependence of temperature (T) and the ambient
                      oxygen partial pressure (pO(2)) by a special 4-point
                      measurement technique. The studies covered lanthanum as
                      donor and-manganese as acceptor type doping in various
                      concentrations as well as selected compositions of the solid
                      solution series (Ba1-xSrx)TiO3. The external parameters were
                      controlled by use of a YSZ solid state oxygen pump in the
                      temperature range from 700degreesC to 1000degreesC and
                      oxygen atmospheres between 10(-20) and 1 bar. In contrast to
                      the features of bulk materials, our investigations on thin
                      films showed with a sharp drop and a plateau region a quite
                      unusual conduction behavior. Because the classical defect
                      chemical explanation fails, different approaches, which take
                      a more complex defect structure and the dimensions into
                      account, are proposed.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000173066600026},
      url          = {https://juser.fz-juelich.de/record/25929},
}