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000025969 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000025969 084__ $$2WoS$$aPhysics, Condensed Matter
000025969 1001_ $$0P:(DE-HGF)0$$aEllerkmann, U.$$b0
000025969 245__ $$aInfluence of the film-electrode interface in thin-film capacitors
000025969 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2002
000025969 300__ $$a315 - 320
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000025969 440_0 $$02058$$aFerroelectrics$$v271$$x0015-0193
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000025969 520__ $$aSome variations in the dielectric parameters in thin films to those in bulk ceramics have been observed in recent years. An interfacial layer between the ferroelectric film and the electrode is believed to be responsible for this behaviour.A series of Ba0.7Sr0.3TiO3 samples with thicknesses ranging from 30 nm to 370 nm have been deposited on Pt-coated Si-wafers by chemical solution deposition (CSD) method.In this contribution investigations of the interface capacity with respect to a temperature dependence in a temperature range between 20 K and 550 K will be presented. Conclusions are drawn on the influence of the interface capacity on the thickness dependence of the dielectric constant.
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000025969 65320 $$2Author$$athin film
000025969 65320 $$2Author$$ainterface capacity
000025969 65320 $$2Author$$adielectric properties
000025969 7001_ $$0P:(DE-HGF)0$$aLiedtke, R.$$b1
000025969 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000025969 773__ $$0PERI:(DE-600)2042895-9$$gVol. 271, p. 315 - 320$$p315 - 320$$q271<315 - 320$$tFerroelectrics$$v271$$x0015-0193$$y2002
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000025969 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
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