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@ARTICLE{Ellerkmann:25969,
author = {Ellerkmann, U. and Liedtke, R. and Waser, R.},
title = {{I}nfluence of the film-electrode interface in thin-film
capacitors},
journal = {Ferroelectrics},
volume = {271},
issn = {0015-0193},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-25969},
pages = {315 - 320},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {Some variations in the dielectric parameters in thin films
to those in bulk ceramics have been observed in recent
years. An interfacial layer between the ferroelectric film
and the electrode is believed to be responsible for this
behaviour.A series of Ba0.7Sr0.3TiO3 samples with
thicknesses ranging from 30 nm to 370 nm have been deposited
on Pt-coated Si-wafers by chemical solution deposition (CSD)
method.In this contribution investigations of the interface
capacity with respect to a temperature dependence in a
temperature range between 20 K and 550 K will be presented.
Conclusions are drawn on the influence of the interface
capacity on the thickness dependence of the dielectric
constant.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {530},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Multidisciplinary / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000177216700053},
url = {https://juser.fz-juelich.de/record/25969},
}