001     25969
005     20180210123639.0
024 7 _ |2 WOS
|a WOS:000177216700053
037 _ _ |a PreJuSER-25969
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Ellerkmann, U.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Influence of the film-electrode interface in thin-film capacitors
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2002
300 _ _ |a 315 - 320
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Ferroelectrics
|x 0015-0193
|0 2058
|v 271
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Some variations in the dielectric parameters in thin films to those in bulk ceramics have been observed in recent years. An interfacial layer between the ferroelectric film and the electrode is believed to be responsible for this behaviour.A series of Ba0.7Sr0.3TiO3 samples with thicknesses ranging from 30 nm to 370 nm have been deposited on Pt-coated Si-wafers by chemical solution deposition (CSD) method.In this contribution investigations of the interface capacity with respect to a temperature dependence in a temperature range between 20 K and 550 K will be presented. Conclusions are drawn on the influence of the interface capacity on the thickness dependence of the dielectric constant.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a thin film
653 2 0 |2 Author
|a interface capacity
653 2 0 |2 Author
|a dielectric properties
700 1 _ |a Liedtke, R.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 2
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |g Vol. 271, p. 315 - 320
|p 315 - 320
|q 271<315 - 320
|0 PERI:(DE-600)2042895-9
|t Ferroelectrics
|v 271
|y 2002
|x 0015-0193
909 C O |o oai:juser.fz-juelich.de:25969
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)17366
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


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