% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Hlbling:25970,
      author       = {Hölbling, T. and Waser, R.},
      title        = {{S}imulation of the charge transport across grain
                      boundaries in p-type {S}r{T}i{O}3 ceramics under dc load :
                      {D}ebye relaxation and dc bias dependence of long-term
                      conductivity},
      journal      = {Journal of applied physics},
      volume       = {91},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-25970},
      pages        = {3037 - 3043},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A mathematical-physical model to describe the charge
                      transport across grain boundaries in p-type SrTiO3 ceramics
                      in the low-temperature regime for arbitrary dc voltage steps
                      has been developed. The finite element model structure
                      consists of a one-dimensional cross section through a
                      ceramic scenario. Mathematical formulation comprises a
                      coupled system of continuity equations (utilizing
                      Maxwell-Boltzmann transport equations) and Poisson's
                      equation, with the appropriate boundary conditions for a
                      potentiostatic simulation approach. The edges of the model
                      are assumed to be blocking for ionic transport, and
                      penetrable for electronic transport. The model was
                      implemented exploiting routines from the numerical class
                      library DIFFPACK(TM). After an initial electrostatic
                      simulation a dc bias voltage step is applied. The evolution
                      of the spatial profiles of electric potential, defect
                      concentrations, space-charge density, and electric
                      conductivity, and the current response are calculated. The
                      results for the ceramic model structure confirm the
                      experimentally observed Debye relaxation, and the
                      characteristic dependence of long-term conductivity on the
                      dc bias after space-charge polarization, before the onset of
                      resistance degradation. (C) 2002 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000174182400070},
      doi          = {10.1063/1.1448404},
      url          = {https://juser.fz-juelich.de/record/25970},
}