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000026622 0881_ $$aJuel-4075
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000026622 1001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b0$$eCorresponding author$$uFZJ
000026622 245__ $$aFabrication and characterization of ultra-fast Si-based detectors for near-infrared wavelenghts
000026622 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2002
000026622 300__ $$aVII, 97 p.
000026622 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis
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000026622 4900_ $$0PERI:(DE-600)2414853-2$$84808$$aBerichte des Forschungszentrums Jülich$$v4075$$x0944-2952
000026622 502__ $$aKöln, Univ., Diss., 2002$$bDr. (Univ.)$$cUniv. Köln$$d2002
000026622 500__ $$aRecord converted from VDB: 12.11.2012
000026622 520__ $$aThis thesis presents two different concepts for the fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors, which are to be used in the near-infrared wavelength regime and which are compatible to silicon processing techniques. To achieve this goal, we have grown Si-Si$_{1-x}$Ge$_{x}$ undulating layer superlattices with x=0.39 and 0.45 by molecular beam epitaxy (MBE) an top of epitaxial implanted COSi$_{2}$ layers and fabricated "vertical" MSM detectors. The devices show a quantum efficiency of 5% for the wavelength of 1320 nm and 0.9 % for 1550 nm. We performed time response measurements, using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at infrared wavelengths. An electrical response time of 11.6 ps füll width at half maximum (FWHM) was obtained at a wavelength of 1300 nm. At 1550 nm a response time of 9.4 ps was measured. In a second approach, we have grown pure Ge by MBE an Si(111). The sensitive volumes are 270 nm thick Ge films. Interdigitated Cr metal top electrodes of 1.5 - 3 $\mu$m spacing and identical finger width form Schottky contacts to the Ge film. These detectors show a response time of 12.5 ps füll width at half maximum both at 1300 nm and 1550 nm. The temporal response is limited by the transit time of the carriers between the electrodes.
000026622 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000026622 655_7 $$aHochschulschrift$$xDissertation (Univ.)
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000026622 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
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