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@PHDTHESIS{Buca:26622,
      author       = {Buca, Dan Mihai},
      title        = {{F}abrication and characterization of ultra-fast {S}i-based
                      detectors for near-infrared wavelenghts},
      volume       = {4075},
      issn         = {0944-2952},
      school       = {Univ. Köln},
      type         = {Dr. (Univ.)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-26622, Juel-4075},
      series       = {Berichte des Forschungszentrums Jülich},
      pages        = {VII, 97 p.},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012; Köln, Univ., Diss.,
                      2002},
      abstract     = {This thesis presents two different concepts for the
                      fabrication of ultrafast metal-semiconductor-metal (MSM)
                      photodetectors, which are to be used in the near-infrared
                      wavelength regime and which are compatible to silicon
                      processing techniques. To achieve this goal, we have grown
                      Si-Si$_{1-x}$Ge$_{x}$ undulating layer superlattices with
                      x=0.39 and 0.45 by molecular beam epitaxy (MBE) an top of
                      epitaxial implanted COSi$_{2}$ layers and fabricated
                      "vertical" MSM detectors. The devices show a quantum
                      efficiency of 5\% for the wavelength of 1320 nm and 0.9 \%
                      for 1550 nm. We performed time response measurements, using
                      a Ti:sapphire laser and an optical parametric oscillator
                      which generates ultrafast pulses at infrared wavelengths. An
                      electrical response time of 11.6 ps füll width at half
                      maximum (FWHM) was obtained at a wavelength of 1300 nm. At
                      1550 nm a response time of 9.4 ps was measured. In a second
                      approach, we have grown pure Ge by MBE an Si(111). The
                      sensitive volumes are 270 nm thick Ge films. Interdigitated
                      Cr metal top electrodes of 1.5 - 3 $\mu$m spacing and
                      identical finger width form Schottky contacts to the Ge
                      film. These detectors show a response time of 12.5 ps füll
                      width at half maximum both at 1300 nm and 1550 nm. The
                      temporal response is limited by the transit time of the
                      carriers between the electrodes.},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/26622},
}