%0 Thesis
%A Kluth, Patrick
%T Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen
%V 3994
%N Juel-3994
%@ 0944-2952
%I Techn. Aachen
%V Dr. (FH)
%C Jülich
%M PreJuSER-26630
%M Juel-3994
%B Berichte des Forschungszentrums Jülich
%P 182 p.
%D 2002
%Z Record converted from VDB: 12.11.2012
%Z Aachen, Techn., Hochsch., Diss., 2002
%X Due to its low resistivity, high scalability and high thermal stability, CoSi$_{2}$ is widely used as a contact and interconnect material in silicon microelctronics. In this thesis a self-assembly process for fabrication of CoSi$_{2}$-nanostructures is investigated. These structures can be used as building blocks for advanced microelectronic devices. The process is based on anisotropic diffusion in a stress field generated along the edge of a mask consisting of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation narrow wires and uniform gaps with dimensions down to 20 nm were produced from 20-30 nm thick single-crystalline, epitaxial CoSi$_{2}$-layers. Gaps with dimensions of approximately 100 nm were generated during the silicide formation in a solid-phase reaction. Using these nanostructures, we fabricated planar 70 nm gate-length Schottky barrier MOSFETs on silicon-on-insulator substrates. These devices can be driven as both p-channel and n-channel MOSFETs without complementary substrate doping and show good I-V characteristics and a transconductance of 200 mS mm$^{-1}$ in the n-channel mode.
%F PUB:(DE-HGF)11 ; PUB:(DE-HGF)3
%9 Dissertation / PhD ThesisBook
%U https://juser.fz-juelich.de/record/26630