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000026630 0881_ $$aJuel-3994
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000026630 1001_ $$0P:(DE-Juel1)VDB5538$$aKluth, Patrick$$b0$$eCorresponding author$$uFZJ
000026630 245__ $$aSelbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen
000026630 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2002
000026630 300__ $$a182 p.
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000026630 4900_ $$0PERI:(DE-600)2414853-2$$84806$$aBerichte des Forschungszentrums Jülich$$v3994$$x0944-2952
000026630 502__ $$aAachen, Techn., Hochsch., Diss., 2002$$bDr. (FH)$$cTechn. Aachen$$d2002
000026630 500__ $$aRecord converted from VDB: 12.11.2012
000026630 520__ $$aDue to its low resistivity, high scalability and high thermal stability, CoSi$_{2}$ is widely used as a contact and interconnect material in silicon microelctronics. In this thesis a self-assembly process for fabrication of CoSi$_{2}$-nanostructures is investigated. These structures can be used as building blocks for advanced microelectronic devices. The process is based on anisotropic diffusion in a stress field generated along the edge of a mask consisting of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation narrow wires and uniform gaps with dimensions down to 20 nm were produced from 20-30 nm thick single-crystalline, epitaxial CoSi$_{2}$-layers. Gaps with dimensions of approximately 100 nm were generated during the silicide formation in a solid-phase reaction. Using these nanostructures, we fabricated planar 70 nm gate-length Schottky barrier MOSFETs on silicon-on-insulator substrates. These devices can be driven as both p-channel and n-channel MOSFETs without complementary substrate doping and show good I-V characteristics and a transconductance of 200 mS mm$^{-1}$ in the n-channel mode.
000026630 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000026630 655_7 $$aHochschulschrift$$xDissertation (FH)
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000026630 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
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