TY  - THES
AU  - Kluth, Patrick
TI  - Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen
VL  - 3994
IS  - Juel-3994
SN  - 0944-2952
PB  - Techn. Aachen
VL  - Dr. (FH)
CY  - Jülich
M1  - PreJuSER-26630
M1  - Juel-3994
T2  - Berichte des Forschungszentrums Jülich
SP  - 182 p.
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
N1  - Aachen, Techn., Hochsch., Diss., 2002
AB  - Due to its low resistivity, high scalability and high thermal stability, CoSi$_{2}$ is widely used as a contact and interconnect material in silicon microelctronics. In this thesis a self-assembly process for fabrication of CoSi$_{2}$-nanostructures is investigated. These structures can be used as building blocks for advanced microelectronic devices. The process is based on anisotropic diffusion in a stress field generated along the edge of a mask consisting of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation narrow wires and uniform gaps with dimensions down to 20 nm were produced from 20-30 nm thick single-crystalline, epitaxial CoSi$_{2}$-layers. Gaps with dimensions of approximately 100 nm were generated during the silicide formation in a solid-phase reaction. Using these nanostructures, we fabricated planar 70 nm gate-length Schottky barrier MOSFETs on silicon-on-insulator substrates. These devices can be driven as both p-channel and n-channel MOSFETs without complementary substrate doping and show good I-V characteristics and a transconductance of 200 mS mm$^{-1}$ in the n-channel mode.
LB  - PUB:(DE-HGF)11 ; PUB:(DE-HGF)3
UR  - https://juser.fz-juelich.de/record/26630
ER  -