% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Kluth:26630,
      author       = {Kluth, Patrick},
      title        = {{S}elbstassemblierte {N}anostrukturierung ultradünner
                      {S}ilizidschichten und {E}ntwicklung von
                      {N}ano-{MOSFET}-{B}auelementen},
      volume       = {3994},
      issn         = {0944-2952},
      school       = {Techn. Aachen},
      type         = {Dr. (FH)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-26630, Juel-3994},
      series       = {Berichte des Forschungszentrums Jülich},
      pages        = {182 p.},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012; Aachen, Techn.,
                      Hochsch., Diss., 2002},
      abstract     = {Due to its low resistivity, high scalability and high
                      thermal stability, CoSi$_{2}$ is widely used as a contact
                      and interconnect material in silicon microelctronics. In
                      this thesis a self-assembly process for fabrication of
                      CoSi$_{2}$-nanostructures is investigated. These structures
                      can be used as building blocks for advanced microelectronic
                      devices. The process is based on anisotropic diffusion in a
                      stress field generated along the edge of a mask consisting
                      of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation
                      narrow wires and uniform gaps with dimensions down to 20 nm
                      were produced from 20-30 nm thick single-crystalline,
                      epitaxial CoSi$_{2}$-layers. Gaps with dimensions of
                      approximately 100 nm were generated during the silicide
                      formation in a solid-phase reaction. Using these
                      nanostructures, we fabricated planar 70 nm gate-length
                      Schottky barrier MOSFETs on silicon-on-insulator substrates.
                      These devices can be driven as both p-channel and n-channel
                      MOSFETs without complementary substrate doping and show good
                      I-V characteristics and a transconductance of 200 mS
                      mm$^{-1}$ in the n-channel mode.},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/26630},
}