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| Hauptseite > Publikationsdatenbank > Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen > print |
| Hauptseite > Publikationsdatenbank > Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen > print |
| 001 | 26630 | ||
| 005 | 20200610184346.0 | ||
| 024 | 7 | _ | |2 Handle |a 2128/259 |
| 024 | 7 | _ | |2 URI |a 259 |
| 037 | _ | _ | |a PreJuSER-26630 |
| 088 | 1 | _ | |a Juel-3994 |
| 088 | _ | _ | |a Juel-3994 |2 JUEL |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB5538 |a Kluth, Patrick |b 0 |e Corresponding author |u FZJ |
| 245 | _ | _ | |a Selbstassemblierte Nanostrukturierung ultradünner Silizidschichten und Entwicklung von Nano-MOSFET-Bauelementen |
| 260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2002 |
| 300 | _ | _ | |a 182 p. |
| 336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |
| 336 | 7 | _ | |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |a Book |
| 336 | 7 | _ | |0 2 |2 EndNote |a Thesis |
| 336 | 7 | _ | |2 DRIVER |a doctoralThesis |
| 336 | 7 | _ | |2 BibTeX |a PHDTHESIS |
| 336 | 7 | _ | |2 DataCite |a Output Types/Dissertation |
| 336 | 7 | _ | |2 ORCID |a DISSERTATION |
| 490 | 0 | _ | |0 PERI:(DE-600)2414853-2 |8 4806 |a Berichte des Forschungszentrums Jülich |v 3994 |x 0944-2952 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 502 | _ | _ | |a Aachen, Techn., Hochsch., Diss., 2002 |b Dr. (FH) |c Techn. Aachen |d 2002 |
| 520 | _ | _ | |a Due to its low resistivity, high scalability and high thermal stability, CoSi$_{2}$ is widely used as a contact and interconnect material in silicon microelctronics. In this thesis a self-assembly process for fabrication of CoSi$_{2}$-nanostructures is investigated. These structures can be used as building blocks for advanced microelectronic devices. The process is based on anisotropic diffusion in a stress field generated along the edge of a mask consisting of SiO$_{2}$ and Si$_{3}$N$_{4}$. Using local oxidation narrow wires and uniform gaps with dimensions down to 20 nm were produced from 20-30 nm thick single-crystalline, epitaxial CoSi$_{2}$-layers. Gaps with dimensions of approximately 100 nm were generated during the silicide formation in a solid-phase reaction. Using these nanostructures, we fabricated planar 70 nm gate-length Schottky barrier MOSFETs on silicon-on-insulator substrates. These devices can be driven as both p-channel and n-channel MOSFETs without complementary substrate doping and show good I-V characteristics and a transconductance of 200 mS mm$^{-1}$ in the n-channel mode. |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK252 |2 G:(DE-HGF) |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |x 0 |
| 655 | _ | 7 | |a Hochschulschrift |x Dissertation (FH) |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/26630/files/Juel_3994_Kluth.pdf |y OpenAccess |
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| 914 | 1 | _ | |y 2002 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0510 |2 StatID |a OpenAccess |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB41 |d 31.12.2006 |g ISG |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)18687 |
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