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@ARTICLE{Kgeler:2727,
      author       = {Kügeler, C. and Hennings, A. and Böttger, U. and Waser,
                      R.},
      title        = {{A}n {I}ntegrated {M}icroelectromechanical {M}icrowave
                      {S}witch {B}ased on {P}iezoelectric {A}ctuation},
      journal      = {Journal of electroceramics},
      volume       = {22},
      issn         = {1385-3449},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {PreJuSER-2727},
      year         = {2009},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In the field of microwave applications,
                      microelectromechanical systems (MEMS) are attractive devices
                      in order to force miniaturization by on chip integration.
                      Here, we describe the design, fabrication and testing of a
                      silicon based micromachined switch using piezo-electrically
                      actuated elements. The microwave circuit consists of a
                      coplanar waveguide (CPW) design with two piezoelectric
                      activated beams integrated between the middle line and the
                      ground planes. During operation the beams short the CPW by
                      two overhanging bridge contacts and therefore the
                      transmission characteristics of the microwave circuit
                      change. The CPW is realized by 3 A mu m thick electroplated
                      copper to yield good transmission characteristics, whereas
                      the clamped-clamped beams benefit from a 250 nm thin PZT
                      film between 100 nm thin Pt electrodes on top of a SiO2
                      layer. By the use of double side clamped beams awkward
                      stress compensation of the piezoelectric stack is omitted.
                      Instead the system relies on some initial mechanical stress.
                      Measurements prove deflections of more than 13 A mu m for a
                      1400 A mu m long beam with operation voltages below 10 V.
                      This is in good agreement with finite element simulations.
                      The novel RF-MEMS is predicted to reach an isolation (in
                      "on" state) of more than 20 dB up to 15 GHz.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Ceramics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000263498800026},
      doi          = {10.1007/s10832-008-9457-7},
      url          = {https://juser.fz-juelich.de/record/2727},
}