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001     2727
005     20180208202701.0
024 7 _ |2 DOI
|a 10.1007/s10832-008-9457-7
024 7 _ |2 WOS
|a WOS:000263498800026
037 _ _ |a PreJuSER-2727
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Materials Science, Ceramics
100 1 _ |a Kügeler, C.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB15125
245 _ _ |a An Integrated Microelectromechanical Microwave Switch Based on Piezoelectric Actuation
260 _ _ |a Dordrecht [u.a.]
|b Springer Science + Business Media B.V
|c 2009
300 _ _ |a
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of Electroceramics
|x 1385-3449
|0 3263
|y 1
|v 22
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In the field of microwave applications, microelectromechanical systems (MEMS) are attractive devices in order to force miniaturization by on chip integration. Here, we describe the design, fabrication and testing of a silicon based micromachined switch using piezo-electrically actuated elements. The microwave circuit consists of a coplanar waveguide (CPW) design with two piezoelectric activated beams integrated between the middle line and the ground planes. During operation the beams short the CPW by two overhanging bridge contacts and therefore the transmission characteristics of the microwave circuit change. The CPW is realized by 3 A mu m thick electroplated copper to yield good transmission characteristics, whereas the clamped-clamped beams benefit from a 250 nm thin PZT film between 100 nm thin Pt electrodes on top of a SiO2 layer. By the use of double side clamped beams awkward stress compensation of the piezoelectric stack is omitted. Instead the system relies on some initial mechanical stress. Measurements prove deflections of more than 13 A mu m for a 1400 A mu m long beam with operation voltages below 10 V. This is in good agreement with finite element simulations. The novel RF-MEMS is predicted to reach an isolation (in "on" state) of more than 20 dB up to 15 GHz.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a RF-MEMS
653 2 0 |2 Author
|a Piezoelectric
653 2 0 |2 Author
|a Thin film
653 2 0 |2 Author
|a PZT
653 2 0 |2 Author
|a Integrated microwave switch
700 1 _ |a Hennings, A.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Böttger, U.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3024
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1007/s10832-008-9457-7
|g Vol. 22
|q 22
|0 PERI:(DE-600)1472395-5
|t Journal of electroceramics
|v 22
|y 2009
|x 1385-3449
856 7 _ |u http://dx.doi.org/10.1007/s10832-008-9457-7
909 C O |o oai:juser.fz-juelich.de:2727
|p VDB
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2009
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|0 I:(DE-Juel1)VDB786
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)107850
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB881

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