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@ARTICLE{Petraru:2728,
      author       = {Petraru, A. and Kohlstedt, H. and Poppe, U. and Waser, R.
                      and Solbach, A. and Klemradt, U. and Schubert, J. and
                      Zander, W. and Pertsev, N. A.},
      title        = {{W}edgelike ultrathin epitaxial {B}a{T}i{O}3 films for
                      studies of scaling effects in ferroelectrics},
      journal      = {Applied physics letters},
      volume       = {93},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-2728},
      pages        = {072902},
      year         = {2008},
      note         = {The authors wish to thank M. Hambe for helpful suggestions.
                      The financial support of Hasylab through project II-05079
                      and the Deutsche Forschungsgemeinschaft under Grant No. KL
                      1021/4-1 and the Volkswagen-Stiftung within the program
                      "Complex Materials: Cooperative Projects of the Natural,
                      Engineering, and Biosciences" under the project I/77 737
                      entitled "Nano-sized ferroelectric Hybrids" is gratefully
                      acknowledged.},
      abstract     = {To study ferroelectric size effects in heteroepitaxial
                      SrRuO3/BaTiO3/SrRuO3 capacitors, ultrathin BaTiO3 layers
                      were deposited in wedge form across SrTiO3 substrates. The
                      wedgelike films were fabricated by using either an
                      off-center substrate-target geometry or via a moveable
                      shutter during high-pressure sputter deposition. The
                      crystallinity, composition, and surface roughness along
                      wedgelike BaTiO3 films were verified by x-ray diffraction,
                      Rutherford backscattering spectrometry, and atomic force
                      microscopy, respectively. The electrical measurements
                      performed at 77 K showed that, despite progressive reduction
                      in remanent polarization as the film thickness decreases
                      even the 3.5-nm-thick BaTiO3 film retains a large remanent
                      polarization of 28 mu C/cm(2). (C) 2008 American Institute
                      of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / IFF-6 / IFF-8 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / I:(DE-Juel1)VDB786 /
                      I:(DE-Juel1)VDB788 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000259010300053},
      doi          = {10.1063/1.2972135},
      url          = {https://juser.fz-juelich.de/record/2728},
}