% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Pertsev:2729,
      author       = {Pertsev, N. A. and Petraru, A. and Kohlstedt, H.},
      title        = {{D}ynamics of ferroelectric nanodomains in {B}a{T}i{O}3
                      epitaxial thin films via piezoresponse force microscopy},
      journal      = {Nanotechnology},
      volume       = {19},
      issn         = {0957-4484},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-2729},
      pages        = {375703},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Ferroelectric nanodomains were created in BaTiO(3) thin
                      films by applying a voltage to a sharp conducting tip of a
                      scanning force microscope (SFM). The films were epitaxially
                      grown on SrRuO(3)-covered (001)-oriented SrTiO(3) substrates
                      by a high-pressure sputtering. They appeared to be
                      single-crystalline with the (001) crystallographic
                      orientation relative to the substrate. Using the
                      piezoresponse mode of the SFM to detect the out-of-plane
                      film polarization, the domain sizes were measured as a
                      function of the applied writing voltage and the pulse time.
                      It was found that the time dependence of the domain
                      diameter in a 60 nm thick BaTiO(3) film deviates
                      significantly from the logarithmic law observed earlier in
                      Pb(Zr(0.2)Ti(0.8))O(3) (PZT) films. At a given writing time,
                      the domain size increases nonlinearly with increasing
                      applied voltage, in contrast to the linear behavior reported
                      earlier for PZT films and LiNbO(3) single crystals. The
                      dynamics of domain growth is analyzed theoretically taking
                      into account the strong inhomogeneity of the external
                      electric field in the film and the influence of the bottom
                      electrode. It is shown that the observed writing time and
                      voltage dependences of the domain size can be explained by
                      the domain-wall creep in the presence of random-bond
                      disorder.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:21832557},
      UT           = {WOS:000258385600020},
      doi          = {10.1088/0957-4484/19/37/375703},
      url          = {https://juser.fz-juelich.de/record/2729},
}