000276249 001__ 276249
000276249 005__ 20210129220825.0
000276249 0247_ $$2doi$$a10.1063/1.4749276
000276249 0247_ $$2ISSN$$a0003-6951
000276249 0247_ $$2ISSN$$a1931-9401
000276249 0247_ $$2WOS$$aWOS:000308408100027
000276249 037__ $$aFZJ-2015-06712
000276249 041__ $$aEnglish
000276249 082__ $$a530
000276249 1001_ $$0P:(DE-HGF)0$$aShirazi, R.$$b0
000276249 245__ $$aTemperature dependent recombination dynamics in InP/ZnS colloidal nanocrystals
000276249 260__ $$aNew York, NY$$bAIP74335$$c2012
000276249 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1448364261_32096
000276249 3367_ $$2DataCite$$aOutput Types/Journal article
000276249 3367_ $$00$$2EndNote$$aJournal Article
000276249 3367_ $$2BibTeX$$aARTICLE
000276249 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000276249 3367_ $$2DRIVER$$aarticle
000276249 500__ $$3POF3_Assignment on 2016-02-29
000276249 520__ $$aIn this letter, we investigate exciton recombination in InP/ZnS core-shell colloidalnanocrystals over a wide temperature range. Over the entire range between room temperature and liquid helium temperature, multi-exponential exciton decay curves are observed and well explained by the presence of bright and dark exciton states, as well as defect states. Two different types of defect are present: one located at the core-shell interface and the other on the surface of the nanocrystal. Based on the temperature dependent contributions of all four states to the total photoluminescence signal, we estimate that the four states are distributed within a 20 meV energy band in nanocrystals that emit at 1.82 eV.
000276249 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000276249 588__ $$aDataset connected to CrossRef
000276249 7001_ $$0P:(DE-HGF)0$$aKopylov, O.$$b1
000276249 7001_ $$0P:(DE-HGF)0$$aKovacs, A.$$b2
000276249 7001_ $$0P:(DE-Juel1)145316$$aKardynal, Beata$$b3$$ufzj
000276249 773__ $$0PERI:(DE-600)2265524-4$$a10.1063/1.4749276$$gVol. 101, no. 9, p. 091910 -$$n9$$p091910 -$$tApplied physics reviews$$v101$$x0003-6951$$y2012
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.pdf$$yRestricted
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.gif?subformat=icon$$xicon$$yRestricted
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.jpg?subformat=icon-180$$xicon-180$$yRestricted
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.jpg?subformat=icon-640$$xicon-640$$yRestricted
000276249 8564_ $$uhttps://juser.fz-juelich.de/record/276249/files/1.4749276.pdf?subformat=pdfa$$xpdfa$$yRestricted
000276249 909CO $$ooai:juser.fz-juelich.de:276249$$pVDB
000276249 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145316$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000276249 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000276249 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000276249 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bAPPL PHYS REV : 2014
000276249 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000276249 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000276249 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000276249 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000276249 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000276249 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000276249 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000276249 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000276249 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000276249 920__ $$lyes
000276249 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000276249 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000276249 980__ $$ajournal
000276249 980__ $$aVDB
000276249 980__ $$aI:(DE-Juel1)PGI-9-20110106
000276249 980__ $$aI:(DE-82)080009_20140620
000276249 980__ $$aUNRESTRICTED